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| BUP 307D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Type BUP 307D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4221-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 35A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 35 23 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 70 46 TC = 25 C TC = 90 C Diode forward current IF 18 TC = 90 C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 307D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 0.42 1.25 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 C VGE = 15 V, IC = 25 A, Tj = 125 C VGE = 15 V, IC = 42 A, Tj = 25 C VGE = 15 V, IC = 42 A, Tj = 125 C Zero gate voltage collector current ICES 0.5 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 5.5 8 2000 160 65 - S pF 2700 240 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-02-1996 BUP 307D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 30 45 ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Rise time tr 22 35 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Turn-off delay time td(off) 230 310 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Fall time tf 20 28 mWs 1.7 - VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 , Tj = 25 C Free-Wheel Diode Diode forward voltage VF 2.4 1.9 2.95 - V IF = 15 A, VGE = 0 V, Tj = 25 C IF = 15 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr ns IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C Reverse recovery charge 100 150 C Qrr IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C 3 1 3 1.8 5.4 Semiconductor Group Dec-02-1996 BUP 307D Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 36 A W Ptot 240 IC 28 24 200 20 160 16 120 12 80 8 4 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 40 0 0 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 7.9s p 10 s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W 100 s IC 10 1 ZthJC 10 -1 1 ms D = 0.50 0.20 10 ms 10 0 10 -2 0.10 0.05 0.02 0.01 DC 10 -1 0 10 10 -3 -5 10 single pulse 10 1 10 2 10 3 V 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-02-1996 BUP 307D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-02-1996 BUP 307D Typ. gate charge VGE = (QGate) parameter: IC puls = 20 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 14 12 10 8 6 4 2 0 0 20 40 60 80 400 V 800 V 100 120 140 nC 180 Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 I Csc/I C(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 Dec-02-1996 BUP 307D Typ. switching time t = f (RG), inductive load, Tj = 125 C parameter: VCE = 600 V, VGE = 15 V, IC = 15 A Typ. forward characteristics IF = f (VF) parameter: Tj 30 A 26 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 24 22 20 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 ZthJC 10 0 Tj=125C Tj=25C 10 -1 D = 0.50 0.20 0.10 10 -2 0.05 0.02 0.01 single pulse 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 7 Dec-02-1996 |
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